Jump to main content
Jump to site search

Issue 39, 2017
Previous Article Next Article

High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

Author affiliations

Abstract

Efficient electron-injection into the emitting layer (EML) plays a pivotal role in the fabrication of high performance blue quantum dot light-emitting diodes (QLEDs). Herein, we reduce the electron-transporting barrier at the ITO/ETL (electron-transporting layer) interface from 0.7 eV to 0.4 eV by spin-coating a polyethylenimine ethoxylated (PEIE) film (8 nm) on the ITO substrate. Meanwhile, the electron-injection barrier was reduced from 0.5 to 0.1 eV at the ETL/QD interface by employing the incorporation of PEIE (0.1 wt%) into a ZnO layer. These above two interfacial modifications jointly decrease the electron barrier and make the electron transportation easier. As a result, the optimized QLEDs with the 460 nm emission peak exhibit a maximum external quantum efficiency (EQE) of 7.85%, which is enhanced by 1.4 fold compared with the reference device (5.68%). It is demonstrated that the facile interfacial modification by the organic polymer PEIE contributes to the fabrication of high-efficiency blue QLEDs.

Graphical abstract: High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

Back to tab navigation

Supplementary files

Article information


Submitted
23 Jun 2017
Accepted
11 Sep 2017
First published
11 Sep 2017

Nanoscale, 2017,9, 14792-14797
Article type
Communication

High performance blue quantum dot light-emitting diodes employing polyethylenimine ethoxylated as the interfacial modifier

Y. Shi, F. Liang, Y. Hu, M. Zhuo, X. Wang and L. Liao, Nanoscale, 2017, 9, 14792
DOI: 10.1039/C7NR04542E

Social activity

Search articles by author

Spotlight

Advertisements