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Issue 3, 2016
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Piezoelectric properties of CH3NH3PbI3 perovskite thin films and their applications in piezoelectric generators

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Abstract

CH3NH3PbI3 (MAPbI3) perovskite thin films were applied to fluorine-doped SnO2 (FTO)/glass and Au/Ti/polyethylene terephthalate (PET) substrates via a two-step process, which involved depositing a CH3NH3I (MAI) solution onto PbI2 films via spin-coating followed by crystallization at temperatures of 100 °C. The 500 nm-thick crystallized MAPbI3 perovskite thin films showed a Curie temperature of ∼328 K, a dielectric permittivity of ∼52, a dielectric loss of ∼0.02 at 1 MHz, and a low leakage current density of ∼10−7 A cm−2 at ±3 V. The polarization–electric field (P–E) hysteresis loop and piezoresponse force microscopy (PFM) results showed that the films had well-developed ferroelectric properties and switchable polarization. Poling at an electrical field of 80 kV cm−1 enhanced the power density of the generator. The values for output voltage and current density of the poled films reached 2.7 V and 140 nA cm−2, respectively, which were 2.7-fold higher than those of the non-poled samples.

Graphical abstract: Piezoelectric properties of CH3NH3PbI3 perovskite thin films and their applications in piezoelectric generators

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Supplementary files

Article information


Submitted
27 Nov 2015
Accepted
01 Dec 2015
First published
01 Dec 2015

J. Mater. Chem. A, 2016,4, 756-763
Article type
Communication
Author version available

Piezoelectric properties of CH3NH3PbI3 perovskite thin films and their applications in piezoelectric generators

Y. Kim, T. Dang, H. Choi, B. Park, J. Eom, H. Song, D. Seol, Y. Kim, S. Shin, J. Nah and S. Yoon, J. Mater. Chem. A, 2016, 4, 756
DOI: 10.1039/C5TA09662F

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