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Issue 3, 2016
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Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

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Abstract

Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process.

Graphical abstract: Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

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Supplementary files

Article information


Submitted
23 Oct 2015
Accepted
14 Dec 2015
First published
14 Dec 2015

Nanoscale, 2016,8, 1691-1697
Article type
Paper

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

S. Hyun, O. Kwon, B. Lee, D. Seol, B. Park, J. Y. Lee, J. H. Lee, Y. Kim and J. K. Kim, Nanoscale, 2016, 8, 1691
DOI: 10.1039/C5NR07377D

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