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Issue 119, 2015
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Poly(sodium-4-styrene sulfonate) (PSSNa)-assisted transferable flexible, top-contact high-resolution free-standing organic field-effect transistors

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Abstract

The development of high-integration, flexible and transferable devices is a very important premise to realize authentically wearable applications in the future. Here, we report how to fabricate flexible, free-standing and high-resolution (down to 5 μm) top-contact OFETs based on a polystyrene (PS) dielectric layer. In this process, we use a special sacrificial layer, poly(sodium-4-styrene sulfonate) (PSSNa). It is low-cost, dissolves quickly in water at room temperature and has good compatibility with most organic material processing techniques. With the help of this sacrificial layer, this kind of free-standing transistors can be successfully transferred onto arbitrary substrates. Furthermore, the degradation of the performance of the devices after multiple and successive transfer is tolerated.

Graphical abstract: Poly(sodium-4-styrene sulfonate) (PSSNa)-assisted transferable flexible, top-contact high-resolution free-standing organic field-effect transistors

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Article information


Submitted
14 Oct 2015
Accepted
09 Nov 2015
First published
11 Nov 2015

RSC Adv., 2015,5, 98288-98292
Article type
Communication
Author version available

Poly(sodium-4-styrene sulfonate) (PSSNa)-assisted transferable flexible, top-contact high-resolution free-standing organic field-effect transistors

D. Ji, A. D. Donner, G. Wilde, W. Hu and H. Fuchs, RSC Adv., 2015, 5, 98288
DOI: 10.1039/C5RA21329K

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