Jump to main content
Jump to site search

Issue 9, 2015
Previous Article Next Article

Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

Author affiliations

Abstract

Graphene nanomesh (GNM)-based optoelectronics integrated with quantum dots (QDs) are investigated in this article. The charge transfer mechanism in the QDs/GNM interface is probed in four terminal gated FET-type photodetectors. The insulating ligand is used to make the GNM/ligand/QDs vertically behave like a metal/insulate/semiconductor (MIS) structure to facilitate the charge tunnelling. With the current constraint effect of the GNM and the effective charge tunnelling, a high-performance photodetector is fabricated with higher responsivity, higher on/off ratio and shorter response time. The results of our analysis and experimental approach can be extended to future graphene-based photodetectors, as long as suitable ligands and an effective architecture are chosen for this type of device.

Graphical abstract: Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

Back to tab navigation

Supplementary files

Publication details

The article was received on 20 Nov 2014, accepted on 22 Jan 2015 and first published on 23 Jan 2015


Article type: Paper
DOI: 10.1039/C4NR06883A
Author version
available:
Download author version (PDF)
Nanoscale, 2015,7, 4242-4249

  •   Request permissions

    Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

    X. Liu, N. Liu, M. Liu, Z. Tao, W. Kuang, X. Ji, J. Chen, W. Lei, Q. Dai, C. Li, X. Li and A. Nathan, Nanoscale, 2015, 7, 4242
    DOI: 10.1039/C4NR06883A

Search articles by author

Spotlight

Advertisements