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Issue 15, 2020
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Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

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Abstract

Recently, trigonal layered GeTe was exfoliated from the rhombohedral germanium telluride using a sonication-assisted liquid-phase method in experiments. We identify the blue phosphorene-like MTe (M = Ge, Sn, and Pb) monolayers and bilayers as two-dimensional semiconductors with a large Rashba-type spin–orbit coupling effect that can be modulated by the external electric field. It is found that Rashba-type spin splitting occurs around the Γ point for both monolayer and bilayer MTe. For the bilayer MTe, we predict that the Rashba effect induced spin and momentum mismatch will give rise to a low recombination rate and long carrier lifetimes. We also obtain Rashba parameters and band gap values that are tunable with the perpendicular external electric field. In general, the low-dimensional MTe materials exhibit excellent functional characteristics, thus being promising for designing spin field-effect transistors and optoelectronic applications.

Graphical abstract: Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

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Article information


Submitted
01 Jan 2020
Accepted
09 Mar 2020
First published
10 Mar 2020

J. Mater. Chem. C, 2020,8, 5143-5149
Article type
Paper

Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

C. Liu, H. Gao, Y. Li, K. Wang, L. A. Burton and W. Ren, J. Mater. Chem. C, 2020, 8, 5143
DOI: 10.1039/D0TC00003E

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