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Issue 26, 2016
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Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement

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Abstract

Layer-by-layer thinning without structural damage is essential for integrating two-dimensional materials (such as black phosphorus (BP)) in nanoelectronics, because their properties are primarily thickness-dependent. Unfortunately, most known etching processes for black phosphorus carry the possibility of structural degradation due to ion bombardment and thermal attack. In this study, we report a mild chemical thinning method free from causing physical damage, performed by modifying the sample configuration in a conventional reactive ion etching system. The thickness of mechanically exfoliated BP flakes can be easily controlled by modified plasma treatment, and these flakes maintain perfect crystallinity. Field-effect transistors based on thickness-controlled BP showed improved device performance after ion bombardment-free plasma etching. Our work provides a new way to realize the full potential of BP-based electronic devices.

Graphical abstract: Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement

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Publication details

The article was received on 14 apr. 2016, accepted on 12 maí 2016 and first published on 13 maí 2016


Article type: Paper
DOI: 10.1039/C6TC01514J
Citation: J. Mater. Chem. C, 2016,4, 6234-6239
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    Tuning the thickness of black phosphorus via ion bombardment-free plasma etching for device performance improvement

    G. Lee, J. Lee, G. Lee and J. Kim, J. Mater. Chem. C, 2016, 4, 6234
    DOI: 10.1039/C6TC01514J

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