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Issue 10, 2015
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Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

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Abstract

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

Graphical abstract: Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

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Publication details

The article was received on 19 jan. 2015, accepted on 02 feb. 2015 and first published on 04 feb. 2015


Article type: Communication
DOI: 10.1039/C5NR00399G
Citation: Nanoscale, 2015,7, 4394-4399
  • Open access: Creative Commons BY license
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    Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

    A. Gubicza, M. Csontos, A. Halbritter and G. Mihály, Nanoscale, 2015, 7, 4394
    DOI: 10.1039/C5NR00399G

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