Issue 10, 2015

Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Abstract

A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.

Graphical abstract: Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Associated articles

Supplementary files

Article information

Article type
Communication
Submitted
27 okt. 2014
Accepted
09 feb. 2015
First published
09 feb. 2015

Phys. Chem. Chem. Phys., 2015,17, 6718-6721

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