Interfacial engineering-induced electronic state modulation in Ru/MoS2 heterostructures for efficient hydrogen evolution reaction

Ning Wang; Yajing Zhang; Canhui Zhang; Xingkun Wang; Shuixing Dai; Minghua Huang; Heqing Jiang

doi:10.1039/D4CC05132G

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Interfacial engineering-induced electronic state modulation in Ru/MoS₂ heterostructures for efficient hydrogen evolution reaction†

Ning Wang,‡^abcd Yajing Zhang,‡^bcde Canhui Zhang,^abcd Xingkun Wang,^bcd Shuixing Dai,^abc Minghua Huang

*^a and Heqing Jiang

*^bcd

Author affiliations

* Corresponding authors

^a Ocean University of China, Qingdao 266100, China
E-mail: huangminghua@ouc.edu.cn

^b Key Laboratory of Functional Membrane Material and Membrane Technology, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, 189 Songling Road, Qingdao, China
E-mail: jianghq@qibebt.ac.cn

^c Shandong Energy Institute, Qingdao, China

^d Qingdao New Energy Shandong Laboratory, Qingdao, China

^e University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

In traditional binary heterojunction catalysts, mismatched energy band structures lead to higher electron transfer barriers. By reducing the work function difference via a ternary Ru–RuS₂/MoS₂ heterostructure, we developed a HER catalyst with remarkable activity (17 mV@10 mA cm⁻²) and excellent stability (300 h@500 mA cm⁻²).

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Article information

DOI: https://doi.org/10.1039/D4CC05132G
Article type: Communication
Submitted: 05 Oct 2024
Accepted: 09 Dec 2024
First published: 12 Dec 2024

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Chem. Commun., 2025, Advance Article

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Interfacial engineering-induced electronic state modulation in Ru/MoS₂ heterostructures for efficient hydrogen evolution reaction

N. Wang, Y. Zhang, C. Zhang, X. Wang, S. Dai, M. Huang and H. Jiang, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D4CC05132G

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