Assembling highly efficient X-ray and UV-visible light detectors using a VS2–MoS2 and VS2–WS2 hybrid composite-embedded perovskite layer

Abstract

In the past few years, perovskite-based research has made great advancements through its active role in the electronics industry. However, the defects in perovskite films caused by uncontrollable crystallization and the brittle ionic compounds cause deterioration in the efficiency and robustness of the resulting devices. In this study, an attempt was made to produce the Cs_0.1MA_0.9PbI₃ perovskite and its transition metal sulfide hybrids (VS₂–XS₂, X = Mo or W) with an altered configuration to realize enhanced device characteristics of perovskite based ultraviolet (UV)-visible and X-ray photodetectors. A maximum photoresponsivity of 73.1 A W⁻¹, detectivity of 4.55 × 10¹² Jones, and normalized photocurrent-to-dark current ratio (NPDR) of 1.81 × 10¹⁰ W⁻¹ at 1179 μW cm⁻² under UV lighting were exhibited by the photodetector comprising the VW2 VS₂–WS₂ doped perovskite layer. Furthermore, an X-ray detector with a Cs_0.1MA_0.9PbI₃-VW2 layer attained a sensitivity and CCD–DCD of 3.66 mA Gy⁻¹ cm⁻² and 12.22 μA cm⁻², respectively. This work provides a new roadmap to fabricate the metal sulfide hybrid-tuned perovskite structures for achieving instant charge extraction and desirable electron/hole transport behaviors to fabricate highly sensitive semiconductor devices.