Hafnia-based oxide enhanced Ga2O3-based photodetectors via band engineering with ultralarge responsivity

Han Wu; Jiaying Shen; Lincong Shu; Jie Dai; Shulin Sha; Zeng Liu; Weihua Tang; Yuehui Wang; Zhenping Wu; Kun Lin; Qiang Li; Jun Miao; Xianran Xing

doi:10.1039/D4QI00490F

Hafnia-based oxide enhanced Ga₂O₃-based photodetectors via band engineering with ultralarge responsivity†

Han Wu,‡^a Jiaying Shen,‡^c Lincong Shu,

‡^b Jie Dai,^g Shulin Sha,^d Zeng Liu,

^f Weihua Tang,^b Yuehui Wang,

^e Zhenping Wu,

^c Kun Lin,^a Qiang Li,

^a Jun Miao

^a and Xianran Xing

*^a

Author affiliations

* Corresponding authors

^a Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing 100083, China. E-mail:
E-mail: xing@ustb.edu.cn

^b College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

^c State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

^d College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, No. 29 Jiangjun Road, Nanjing 211106, China

^e Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China

^f School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China

^g Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China

Abstract

Ga₂O₃ thin films have emerged as an excellent choice as a photoactive layer, with specifically significant prospects for detection within the solar blind range, due to its large direct bandgap, high sensitivity and outstanding stability. Yet, achieving a high responsivity at low supply voltage has proven to be challenging. Here, we fabricated and characterized high-performance vertical-structured β-Ga₂O₃ photodetectors with epitaxial Hf_0.5Zr_0.5O₂ as an interlayer that demonstrated a very high responsivity of up to 148 A W⁻¹ at a low voltage of 9.8 V. The polar Hf_0.5Zr_0.5O₂ interlayer and low dark current density characteristics enhance the detection performance at low supply voltage and ultralow light intensity. These results provide a path towards high-performance and highly integrated deep-ultraviolet detection devices, beyond conventional ones in terms of application.

Inorganic Chemistry Frontiers

Hafnia-based oxide enhanced Ga₂O₃-based photodetectors via band engineering with ultralarge responsivity†

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Inorganic Chemistry Frontiers