Issue 19, 2023

Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

Abstract

As a novel wide bandgap semiconductor, ε phase Ga2O3 is characterized by an extremely high polarization coefficient and could be applied in different kinds of piezoelectric or electronic devices. However, to date, the growth technologies of ε-Ga2O3 have been so limited that high quality ε-Ga2O3 is still unavailable. In this work, ε-Ga2O3 thin films were grown on c-plane sapphire substrates by metal–organic chemical vapor deposition (MOCVD) using a two-step method. The effect of using N2O as an oxygen precursor for the epitaxial growth of ε-Ga2O3 is investigated. The phase purity and growth mode of Ga2O3 thin films are investigated for samples prepared under different conditions. Phase transition takes place depending on the VI/III ratio, which is explained by the interplay of thermodynamic and kinetic effects. At a growth temperature of 600 °C, the full width at half maximum (FWHM) of the ε-Ga2O3 (004) plane rocking curve is as low as 0.20°, demonstrating that N2O could be a potential precursor for the MOCVD growth of ε-Ga2O3.

Graphical abstract: Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

Supplementary files

Article information

Article type
Paper
Submitted
25 Jan 2023
Accepted
05 Apr 2023
First published
08 Apr 2023

CrystEngComm, 2023,25, 2871-2876

Metal–organic chemical vapor deposition of ε-Ga2O3 thin film using N2O as a precursor

S. Chen, Z. Chen, W. Chen, Z. Fei, T. Luo, J. Liang, X. Wang, G. Wang and Y. Pei, CrystEngComm, 2023, 25, 2871 DOI: 10.1039/D3CE00078H

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