Surface oxygen vacancy engineering on TiO2 (101) via ALD technology for simultaneously enhancing charge separation and transfer

Wenbo Wu; Zhenbo Peng; Jun Wang; Xiaoyu Li; Ping Deng; Yuhu Zhou; Gan Jia; Wei Ye; Peng Gao

doi:10.1039/D2CC06853B

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Surface oxygen vacancy engineering on TiO₂ (101) via ALD technology for simultaneously enhancing charge separation and transfer†

Wenbo Wu,^a Zhenbo Peng,^b Jun Wang,^a Xiaoyu Li,^a Ping Deng,^a Yuhu Zhou,^a Gan Jia,*^a Wei Ye

*^a and Peng Gao

*^a

Author affiliations

* Corresponding authors

^a College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou, Zhejiang 311121, P. R. China
E-mail: gjia@hznu.edu.cn, yewei@hznu.edu.cn, gaopeng@hrbeu.edu.cn

^b Zhejiang Collaborative Innovation Center for High Value Utilization of Byproducts from Ethylene Project, Ningbo Polytechnic, Ningbo, Zhejiang 315800, P. R. China

Abstract

Titanium oxide molecular layers containing extensive SOV content (11.4–16.2%) have been constructed on (101) TiO₂ nanotubes through a precisely controlled atomic layer deposition technique, in which the charge separation efficiency and surface charge transfer efficiency are increased to 28.2% and 89.0%, respectively, about 17 and 2 times those of the initial TiO₂ nanotubes.

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Article information

DOI: https://doi.org/10.1039/D2CC06853B
Article type: Communication
Submitted: 16 Dec 2022
Accepted: 14 Feb 2023
First published: 16 Feb 2023

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Chem. Commun., 2023,59, 3237-3240

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Surface oxygen vacancy engineering on TiO₂ (101) via ALD technology for simultaneously enhancing charge separation and transfer

W. Wu, Z. Peng, J. Wang, X. Li, P. Deng, Y. Zhou, G. Jia, W. Ye and P. Gao, Chem. Commun., 2023, 59, 3237 DOI: 10.1039/D2CC06853B

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Chemical Communications