Study on the effect of Sn concentration on the structural, optical, and electrical properties of (Al0.55In0.45)2O3:Sn films

Abstract

(Al_0.55In_0.45)₂O₃:Sn films were prepared on MgO (110) single crystalline substrates by the high vacuum metal organic vapor phase epitaxy (MOVPE) method. Structural analyses showed that the (Al_0.55In_0.45)₂O₃:Sn film exhibited a variation from an amorphous structure to a crystalline structure with an increase in the tin content. By regulating the tin content, the resistivity of the (Al_0.55In_0.45)₂O₃:Sn film could be reduced by up to two orders of magnitude at a tin content of 21%. A resistivity of 1.19 × 10⁻³ Ω cm was acquired for the film, along with a mobility of 17.5 cm² V⁻¹ s⁻¹. The average transmittance of the (Al_0.55In_0.45)₂O₃:Sn films in the visible region exceeded 82%. Bandgap values in the range of 5.45 to 4.21 eV could be obtained for samples with various tin contents. The variations of extinction coefficients and refractive indexes for the (Al_0.55In_0.45)₂O₃:Sn films with the change of light wavelength were studied.