Field emission behaviors of CsPbI3 nanobelts

Zhentao Du; Fulin Jiang; Jinju Zheng; Shanliang Chen; Fengmei Gao; Jie Teng; Dingfa Fu; Hui Zhang; Weiyou Yang

doi:10.1039/D0TC00005A

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Field emission behaviors of CsPbI₃ nanobelts†

Zhentao Du,^ab Fulin Jiang,*^a Jinju Zheng,^b Shanliang Chen,

^b Fengmei Gao,^b Jie Teng,^a Dingfa Fu,^a Hui Zhang^a and Weiyou Yang

*^b

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* Corresponding authors

^a College of Materials Science and Engineering, Hunan University, Changsha, People's Republic of China
E-mail: fulin.jiang.88@hnu.edu.cn
Fax: +86-574-87081221
Tel: +86-574-87080966

^b Institute of Materials, Ningbo University of Technology, Ningbo, People's Republic of China
E-mail: weiyouyang@tsinghua.org.cn

Abstract

In the present study, the field emission (FE) behaviors of CsPbI₃ nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI₃ nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI₃ nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI₃ nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (E_to) of ∼2.62 V μm⁻¹ and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.

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Article information

DOI: https://doi.org/10.1039/D0TC00005A
Article type: Paper
Submitted: 01 Jan 2020
Accepted: 06 Mar 2020
First published: 06 Mar 2020

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J. Mater. Chem. C, 2020,8, 5156-5162

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Field emission behaviors of CsPbI₃ nanobelts

Z. Du, F. Jiang, J. Zheng, S. Chen, F. Gao, J. Teng, D. Fu, H. Zhang and W. Yang, J. Mater. Chem. C, 2020, 8, 5156 DOI: 10.1039/D0TC00005A

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Journal of Materials Chemistry C