Issue 1, 2018

Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

Abstract

Particulate Ta3N5, a material that responds to visible light for photoelectrochemical O2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta3N5 to the back-contact metal layer and prevented hole–electron recombination.

Graphical abstract: Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

Supplementary files

Article information

Article type
Communication
Submitted
16 Aug 2017
Accepted
13 Oct 2017
First published
13 Oct 2017

Sustainable Energy Fuels, 2018,2, 73-78

Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

Y. Asakura, T. Higashi, H. Nishiyama, H. Kobayashi, M. Nakabayashi, N. Shibata, T. Minegishi, T. Hisatomi, M. Katayama, T. Yamada and K. Domen, Sustainable Energy Fuels, 2018, 2, 73 DOI: 10.1039/C7SE00402H

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