Synthesis and luminescent properties of ternary Si–Ge–N nanowires
Abstract
Herein, we report the successful synthesis of silicon germanium nitride (Si1−xGex)3N4 nanowires with controllable Si : Ge ratios by nitriding cryomilled Si–Ge alloys at different sintering temperatures. The nanowires with different Si : Ge ratios show obvious differences in their diameters and band structures. The diameters are about 130 nm and 70 nm for the (Si0.16Ge0.84)3N4 and (Si0.94Ge0.06)3N4 nanowires, respectively. The band gap is 2.3 eV for (Si0.16Ge0.84)3N4 and 3.4 eV for (Si0.94Ge0.06)3N4. Both PL and CL spectra show a strong green emission peak for the (Si0.16Ge0.84)3N4 nanowire, whereas violet and orange peaks for (Si0.16Ge0.84)3N4. This study will be useful not only for the synthesis of different polymorphs of nanostructures, but also for the development of new generation nitrides emitting materials with tunable luminous properties.