Issue 27, 2016
From the journal:

Chemical Communications

Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors†

Lili Liu,a   Zhongjie Ren,*a   Chengyi Xiao,b   Bing He,a   Huanli Dong,*b   Shouke Yan,a   Wenping Hub  and  Zhaohui Wangb  

* Corresponding authors

a State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China
E-mail: renzj@mail.buct.edu.cn

b Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, The Chinese Academy of Sciences, Beijing 100190, China
E-mail: dhl522@iccas.ac.cn

Abstract

Large-area highly-ordered F-NDI films were obtained by epitaxial-crystallization on highly-oriented PE substrates through vacuum deposition. An electron mobility of 0.2 cm2 V−1 s−1 was achieved based on such epitaxially-crystallized F-NDI films, which is 4 times higher than that of its un-oriented thin film devices.

Graphical abstract: Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors

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Article information

DOI
https://doi.org/10.1039/C6CC01148A
Article type
Communication
Submitted
04 Feb 2016
Accepted
04 Mar 2016
First published
14 Mar 2016

Chem. Commun., 2016,52, 4902-4905

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Epitaxially-crystallized oriented naphthalene bis(dicarboximide) morphology for significant performance improvement of electron-transporting thin-film transistors

L. Liu, Z. Ren, C. Xiao, B. He, H. Dong, S. Yan, W. Hu and Z. Wang, Chem. Commun., 2016, 52, 4902 DOI: 10.1039/C6CC01148A

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