Memristive behaviour in inkjet printed graphene oxide thin layers

Abstract

Memristors are passive two-terminal memory devices predicted to have a tremendous impact on many research fields and common applications, paving the way to adaptive electronics and high computing systems. We report on a metal/insulator/metal memristor based on a graphene oxide layer, deposited by inkjet printing at room temperature. The electrical characterization of devices, showing hysteretic characteristics typical of bipolar memristive switching, are discussed and correlated to the structural and compositional analysis of the materials. The electroforming process is ascribed to a lowering in contact resistance due to carbon diffusion in Ag electrode, while the oxygen ion drift is identified as the main physical mechanism for Ag/GO/ITO resistive switching.