Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress

Abstract

This paper presents for the first time the orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress. Experimental results indicate that the offset voltage of p-type 3C–SiC four-terminal devices significantly depends on the directions of the applied current and stress. We also calculated the piezoresistive coefficients π₆₁, π₆₂, and π₆₆, showing that π₆₆ with its maximum value of approximately 16.7 × 10⁻¹¹ Pa⁻¹ plays a more dominant role than π₆₁ and π₆₂. The magnitude of the offset voltage in arbitrary orientation under stress was estimated based on these coefficients. The finding in this study plays an important role in the optimization of Microelectromechanical Systems (MEMS) mechanical sensors utilizing the pseudo-Hall effect in p-type 3C–SiC.