Issue 14, 2014
From the journal:

Journal of Materials Chemistry C

Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

Beibei Xu,ab   Jianhua Hao,*a   Qiangbing Guo,b   Juechen Wang,b   Gongxun Bai,a   Bin Fei,d   Shifeng Zhoub  and  Jianrong Qiu*bc  

* Corresponding authors

a Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, P.R. China
E-mail: jh.hao@polyu.edu.hk
Fax: +852 23337629
Tel: +852 27664098

b State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P.R. China
E-mail: qjr@zju.edu.cn
Fax: +86 571 88925079
Tel: +86 571 88214392

c State Key Laboratory of Luminescence Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, Guangzhou, Guangdong 510640, P.R. China

d Institute of Textiles & Clothing, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, P.R. China

Abstract

Ultrabroadband near-infrared luminescence in the 1.0–2.4 μm range has been observed in bismuth (Bi)-doped oxyfluoride germanate thin films prepared by pulsed laser deposition (PLD). The emission peak position shows a red-shift with decreasing oxygen pressure during PLD growth. Systematic investigation reveals that the origin of the luminescence could be ascribed to Bi clusters. With the sensitization of Bi near-infrared active centers, enhanced broadband ∼2 μm luminescence of Ho3+ is realized in Bi/Ho co-doped films, and a high energy transfer efficiency is obtained. These results may provide promise to realize planar waveguide lasers in the near-infrared region for integrated optics.

Graphical abstract: Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

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Article information

DOI
https://doi.org/10.1039/C3TC32177K
Article type
Paper
Submitted
04 Nov 2013
Accepted
14 Jan 2014
First published
14 Jan 2014

J. Mater. Chem. C, 2014,2, 2482-2487

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Ultrabroadband near-infrared luminescence and efficient energy transfer in Bi and Bi/Ho co-doped thin films

B. Xu, J. Hao, Q. Guo, J. Wang, G. Bai, B. Fei, S. Zhou and J. Qiu, J. Mater. Chem. C, 2014, 2, 2482 DOI: 10.1039/C3TC32177K

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