Electrical properties of diamond single crystals co-doped with hydrogen and boron

Abstract

In this paper, diamond single crystals co-doped with H and B were successfully synthesized under a fixed pressure of 6.0 GPa and temperature ranging from 1560 to 1600 K. In the synthesized diamond, hydrogen was found to be mainly incorporated as sp³ CH₂, which had been detected by its characteristic stretching absorptions at 2920 cm⁻¹ and 2850 cm⁻¹ from the Fourier transform infrared spectra. Raman measurements indicated that the diamonds co-doped with B and H had a more compatible lattice structure than B-doped diamond. Hall effect measurements indicated that the co-doped diamonds showed p-type semiconductor behavior. Besides, the Hall mobility was nearly equivalent between B-doped and co-doped diamond crystals, while the concentrations of the carrier and conductivity of the co-doped diamonds were higher than that of the B-doped diamond crystals.