Highly efficient and well-resolved Mn2+ ion emission in MnS/ZnS/CdS quantum dots†
Abstract
We demonstrate a strategy for the growth of Mn2+ ion doped cadmium based II–VI semiconductor
* Corresponding authors
a
Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China
E-mail:
tianlinhai@tyut.edu.cn
b
Institute of Materials, Ningbo University of Technology, Ningbo 315016, People's Republic of China
E-mail:
weiyouyang@tsinghua.org.cn
Tel: +86-574-87080966
c School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016, People's Republic of China
d State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China
e School of Chemistry and Materials Science, Guizhou Normal University, Guiyang 550001, People's Republic of China
We demonstrate a strategy for the growth of Mn2+ ion doped cadmium based II–VI semiconductor
S. Cao, J. Zheng, J. Zhao, L. Wang, F. Gao, G. Wei, R. Zeng, L. Tian and W. Yang, J. Mater. Chem. C, 2013, 1, 2540 DOI: 10.1039/C3TC00561E
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