Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances†
Abstract
There has recently been a great deal of interest and excitement in applying
* Corresponding authors
a
Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, P. R. China
E-mail:
jbxu@ee.cuhk.edu.hk
b
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, P. R. China
E-mail:
lmpeng@pku.edu.cn
There has recently been a great deal of interest and excitement in applying
X. Wang, H. Xu, J. Min, L. Peng and J. Xu, Nanoscale, 2013, 5, 2811 DOI: 10.1039/C3NR33940H
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