Photoelectrical properties and the electronic structure of Tl1−xIn1−xSnxSe2 (x = 0, 0.1, 0.2, 0.25) single crystalline alloys
Abstract
Photoelectrical properties of Tl1−xIn1−xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman–Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1−xIn1−xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1−xIn1−xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400–1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal