Investigation of doping effects on magnetic properties of the hydrogenated and fluorinated graphene structures by extra charge mimic†
Abstract
The effects of electron and hole doping on the magnetic properties of hydrogenated and fluorinated
* Corresponding authors
a
Institute for Clean Energy & Advanced Materials, Southwest University, Chongqing 400715, P.R. China
E-mail:
ecmli@swu.edu.cn
b School of Chemical and Biomedical Engineering, Nanyang Technological University, 70 Nanyang Drive, Singapore
c Center for Advanced Bionanosystems, Nanyang Technological University, 70 Nanyang Drive, Singapore
d Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies, Chongqing 400715, P.R. China
The effects of electron and hole doping on the magnetic properties of hydrogenated and fluorinated
M. Wang and C. M. Li, Phys. Chem. Chem. Phys., 2013, 15, 3786 DOI: 10.1039/C3CP00071K
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content