Low pressure plasma assisted silicon nanowire growth from self organised tin catalyst particles

Abstract

We present results on the growth of silicon nanowires from self organised tin catalyst particles by electron cyclotron resonance chemical vapour deposition (ECRCVD), a technique utilising process pressures in the mTorr range with the allied long mean free path. The formation of tin catalyst particles from layers with initial thicknesses of 6, 12 and 24 nm is studied along with nanowire growth parameters of silane partial pressure, microwave power and process pressure. Preliminary observations on the effects on wire growth of a radio frequency (RF) generated direct current (DC) sample self bias are also reported. Observations are made on the mechanisms influencing nanowire growth along with catalyst stability.