Radial growth behavior and characteristics of m-plane In0.16Ga0.84N/GaN MQW nanowires by MOCVD
Abstract
We demonstrate the growth of high-quality non-polar (m-plane) and semi-polar (r-plane) multiple quantum well (MQW)
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* Corresponding authors
a
Semiconductor Materials and Process Laboratory, School of Advanced Materials Engineering, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju, South Korea
E-mail:
crlee7@jbnu.ac.kr
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We demonstrate the growth of high-quality non-polar (m-plane) and semi-polar (r-plane) multiple quantum well (MQW)
Y. Ra, R. Navamathavan, J. Park and C. Lee, CrystEngComm, 2013, 15, 1874 DOI: 10.1039/C2CE26842F
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