Issue 7, 2013
From the journal:

CrystEngComm

Growth and microstructure of heterogeneous crystal GaSe:InS

Victor V. Atuchin,*a   Nina F. Beisel,b   Konstantin A. Kokh,c   Vladimir N. Kruchinin,d   Ilya V. Korolkov,e   Lev D. Pokrovsky,a   Alphiya R. Tsygankovab  and  Aleksander E. Kokhc  

* Corresponding authors

a Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, Russia
E-mail: atuchin@isp.nsc.ru
Fax: +7 383 3332771
Tel: +7 383 3308889

b Analytical Laboratory, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 90, Russia
E-mail: beisel@niic.nsc.ru
Fax: +7 383 3309489
Tel: +7 383 3306965

c Laboratory of Crystal Growth, Institute of Geology and Mineralogy, SB RAS, Novosibirsk 90, Russia
E-mail: k.a.kokh@gmail.com, a.e.kokh@gmail.com
Fax: +7 383 33066392
Tel: +7 383 33066392

d Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, Russia
E-mail: kruch@isp.nsc.ru
Fax: +7 383 3332771
Tel: +7 383 3308946

e Laboratory of Crystal Chemistry, Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 90, Russia
E-mail: korolkov@niic.nsc.ru
Fax: +7 383 3309489
Tel: +7 383 3309466

Abstract

An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as yIn = 0.28 at% and yS = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE).

Graphical abstract: Growth and microstructure of heterogeneous crystal GaSe:InS

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Article information

DOI
https://doi.org/10.1039/C2CE26474A
Article type
Paper
Submitted
12 Sep 2012
Accepted
26 Nov 2012
First published
27 Nov 2012

CrystEngComm, 2013,15, 1365-1369

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Growth and microstructure of heterogeneous crystal GaSe:InS

V. V. Atuchin, N. F. Beisel, K. A. Kokh, V. N. Kruchinin, I. V. Korolkov, L. D. Pokrovsky, A. R. Tsygankova and A. E. Kokh, CrystEngComm, 2013, 15, 1365 DOI: 10.1039/C2CE26474A

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