Thermal behavior of MOCVD-grown Cu-clusters on ZnO(100)

Abstract

Scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS, AES) were used to study MOCVD of Cu-clusters on the mixed terminated ZnO(100) surface in comparison to MBE Cu-deposition. Both deposition methods result in the same Cu cluster morphology. After annealing to 670 K the amount of Cu visible above the oxide surface is found to decrease substantially, indicating a substantial diffusion of Cu atoms inside the ZnO-bulk. The spectroscopic data do not show any evidence for changes in the Cu oxidation state during thermal treatment up to 770 K.