Issue 10, 2012
From the journal:

Nanoscale

Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication†

Hyun Jae Song,‡a   Minhyeok Son,‡a   Chibeom Park,a   Hyunseob Lim,a   Mark P. Levendorf,b   Adam W. Tsen,b   Jiwoong Parkb  and  Hee Cheul Choi*a  

* Corresponding authors

a Department of Chemistry and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH) San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784 Korea
E-mail: choihc@postech.edu
Fax: +82 54-279-3399
Tel: +82 54-279-2130

b Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
Fax: +1 607-255-4137
Tel: +1 607-254-3339

Abstract

Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.

Graphical abstract: Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

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Article information

DOI
https://doi.org/10.1039/C2NR30330B
Article type
Communication
Submitted
11 Feb 2012
Accepted
23 Mar 2012
First published
29 Mar 2012

Nanoscale, 2012,4, 3050-3054

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Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication

H. J. Song, M. Son, C. Park, H. Lim, M. P. Levendorf, A. W. Tsen, J. Park and H. C. Choi, Nanoscale, 2012, 4, 3050 DOI: 10.1039/C2NR30330B

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