Issue 4, 2011
From the journal:

Nanoscale

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

Jiang Wu,a   Zhiming M. Wang,*a   Vitaliy G. Dorogan,a   Shibin Li,a   Yuriy I. Mazura  and  Gregory J. Salamoa  

* Corresponding authors

a Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, USA
E-mail: zmwang@uark.edu
Fax: +479 575 4580
Tel: +479 575 4217

Abstract

The morphology and optical properties of In0.35Ga0.65As/GaAs quantum dots (QDs) grown on (210), (311)A, (711)A, (731) and (100) substrates are investigated. QDs formed on (210) and (731) oriented substrates are grown by molecular beam epitaxy. Regular QDs are observed on (100), (311)A, and (711)A. Randomly distributed QDs and comet-shaped QDs form on (210) and (731) substrates, respectively. A high density of QDs on the order of 1011 cm−2 are obtained from (711)A. The optical measurement shows a spectrum linewidth (FWHM = 74.3 nm) of QDs on GaAs (210) three times wider than GaAs (100) substrate. Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications.

Graphical abstract: Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

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Article information

DOI
https://doi.org/10.1039/C0NR00973C
Article type
Communication
Submitted
12 Dec 2010
Accepted
25 Jan 2011
First published
08 Mar 2011

Nanoscale, 2011,3, 1485-1488

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Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

J. Wu, Z. M. Wang, V. G. Dorogan, S. Li, Y. I. Mazur and G. J. Salamo, Nanoscale, 2011, 3, 1485 DOI: 10.1039/C0NR00973C

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