Issue 36, 2011

Solid state synthesis of nitride, carbide and boride nanocrystals in an autoclave

Abstract

This feature article provides a brief overview of the latest developments in the solid state synthesis of various nitride, carbide and boride nanocrystals in an autoclave at mild temperatures. An additive assisted route was developed for nitride, carbide and boride nanocrystals. In the presence of S powder, 3C–SiC nanocrystals were obtained utilizing waste plastics and Si powder at 350–500 °C. With the assistance of I2, rare-earth and alkaline-earth hexaboride nanocrystals were prepared at temperatures below 400 °C. As N-aminothiourea and iodine were added to the system containing Si and NaN3, β-Si3N4 nanorods and α,β-Si3N4 nanoparticles could be prepared at 60 °C. A ternary nitride of MgSiN2 can also be prepared at 350–500 °C using Si, Mg, and NaN3 as reactants.

Graphical abstract: Solid state synthesis of nitride, carbide and boride nanocrystals in an autoclave

Article information

Article type
Feature Article
Submitted
30 Apr 2011
Accepted
06 Jun 2011
First published
21 Jul 2011

J. Mater. Chem., 2011,21, 13756-13764

Solid state synthesis of nitride, carbide and boride nanocrystals in an autoclave

Y. Zhu, Q. Li, T. Mei and Y. Qian, J. Mater. Chem., 2011, 21, 13756 DOI: 10.1039/C1JM11893E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements