Issue 28, 2011
From the journal:

Journal of Materials Chemistry

Fabrication of tin dioxidenanowires with ultrahigh gas sensitivity by atomic layer deposition of platinum†

Yu-Hung Lin,a   Yang-Chih Hsueh,a   Po-Sheng Lee,a   Chih-Chieh Wang,a   Jyh Ming Wu,b   Tsong-Pyng Pernga  and  Han C. Shih*ac  

* Corresponding authors

a Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

b Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan

c Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei, Taiwan

Abstract

Gas-sensing properties of SnO2 nanowires were investigated before and after their surface functionalization by the atomic layer deposition (ALD) of Pt nanoparticles. The morphology, size, and concentration of Pt particles on SnO2 nanowires can be controlled by varying the number of ALD reaction cycles, and therefore, the gas-sensing properties of the nanowires can be altered via the Pt catalyst effect and the modification of Schottky barrier junctions on the nanowire surface in the vicinity of Pt nanoparticles. The Pt-decorated SnO2 nanowires obtained after 200 ALD reaction cycles exhibited an ultrahigh gas sensitivity (S = Ig/Ia) of ∼8400 to 500 ppm ethanol vapor at 200 °C. This provides an efficient route for strongly enhancing the gas sensitivity of semiconducting nanostructures and fabricating gas sensors that are highly sensitive and responsive.

Graphical abstract: Fabrication of tin dioxide nanowires with ultrahigh gas sensitivity by atomic layer deposition of platinum

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C1JM10785B
Article type
Paper
Submitted
22 Feb 2011
Accepted
07 Apr 2011
First published
20 Jun 2011

J. Mater. Chem., 2011,21, 10552-10558

Permissions

Request permissions

Fabrication of tin dioxide nanowires with ultrahigh gas sensitivity by atomic layer deposition of platinum

Y. Lin, Y. Hsueh, P. Lee, C. Wang, J. M. Wu, T. Perng and H. C. Shih, J. Mater. Chem., 2011, 21, 10552 DOI: 10.1039/C1JM10785B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements