Issue 8, 2011
From the journal:

Journal of Materials Chemistry

Field effect transistor based on single crystalline InSb nanowire

Yennai Wang,a   Junhong Chi,a   Karan Banerjee,a   Detlev Grützmacher,b   Thomas Schäpersbc  and  Jia G. Lu*a  

* Corresponding authors

a Department of Physics & Astronomy and Department of Electrophysics, University of Southern California, Los Angeles, CA, USA
E-mail: jialu@usc.edu
Fax: +1 21 3740 6653
Tel: +1 21 3821 4328

b Institute of Bio- and Nanosystems, Forschungszentrum Jülich GmbH, Jülich, Germany

c JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, Germany

Abstract

InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.

Graphical abstract: Field effect transistor based on single crystalline InSb nanowire

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Article information

DOI
https://doi.org/10.1039/C0JM03855E
Article type
Communication
Submitted
09 Nov 2010
Accepted
05 Dec 2010
First published
11 Jan 2011

J. Mater. Chem., 2011,21, 2459-2462

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Field effect transistor based on single crystalline InSb nanowire

Y. Wang, J. Chi, K. Banerjee, D. Grützmacher, T. Schäpers and J. G. Lu, J. Mater. Chem., 2011, 21, 2459 DOI: 10.1039/C0JM03855E

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