Tuning the electrical transport properties of n-type CdS nanowiresvia Ga doping and their nano-optoelectronic applications
Abstract
* Corresponding authors
a
School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui 230009, P. R. China
E-mail:
jsjie@hfut.edu.cn
b School of Materials Science and Engineering, Hefei University of Technology, Hefei Anhui 230009, P. R. China
J. Cai, J. Jie, P. Jiang, D. Wu, C. Xie, C. Wu, Z. Wang, Y. Yu, L. Wang, X. Zhang, Q. Peng and Y. Jiang, Phys. Chem. Chem. Phys., 2011, 13, 14663 DOI: 10.1039/C1CP21104H
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