Issue 16, 2011

Post-deposition annealing control of phase and texture for the sputtered MoO3 films

Abstract

Thin films were sputtered on Si substrates from a metallic Mo target at room temperature and then annealed in air at the temperatures between 200–550 °C to form MoO3 of various phases and textures. The films annealed at 450 °C for 1 h showed a pure α phase and their texture was dependent on the ambient pressure during the initial sputtering deposition. The films sputtered under 3 mTorr were b-axis oriented with a broad in-plane alignment after annealing, while the films sputtered under higher pressures showed a texture with the Mo-O6 double-layers upright to the substrate. The films annealed between 350–400 °C were composed of both α and β phases. Below 350 °C, nearly a pure β phase was obtained, which showed a preferred a-axis orientation if the annealing temperature was in the range of 350–300 °C. Ammonia gas sensing properties were tested for the films. The β phase showed best sensitivity, while the α phase with the planar texture showed shortest recovery time. MoO3 films have wide-ranging applications, each of which prefers a specific phase and texture. This simple but productive method is therefore of practical importance.

Graphical abstract: Post-deposition annealing control of phase and texture for the sputtered MoO3 films

Article information

Article type
Paper
Submitted
17 Feb 2011
Accepted
11 May 2011
First published
22 Jun 2011

CrystEngComm, 2011,13, 5125-5132

Post-deposition annealing control of phase and texture for the sputtered MoO3 films

W. Chang, X. Qi, J. Kuo, S. Lee, S. Ng and D. Chen, CrystEngComm, 2011, 13, 5125 DOI: 10.1039/C1CE05214D

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