Liquid phase electroepitaxy of semiconductors under static magnetic field

Abstract

The article presents a short review of the growth of single crystal bulk semiconductors by liquid phase electroepitaxy (LPEE) under a static magnetic field. Following a short introduction on early modelling and theoretical studies on LPEE, recent experimental results of the LPEE growth of GaAs/GaInAs single crystals under a static applied magnetic field are discussed. Crystal growth experiments show that the application of a static magnetic field in the LPEE growth of GaAs increases growth rate very significantly. A continuum model that introduces a new electric mobility, i.e., the electromagnetic mobility, allows accurate predictions for both the growth rate and the growth interface shape. A thermodynamic and kinetic interpretation for this electromagnetic mobility is given.