Issue 22, 2011
From the journal:

Chemical Communications

P-type 3C-SiC nanowires and their optical and electrical transport properties†

Youqiang Chen,*ab   Xinni Zhang,*ad   Qing Zhao,*c   Li He,c   Chengkuang Huangc  and  Zhipeng Xied  

* Corresponding authors

a College of Physics Science, Qingdao University, Qingdao, P.R. China
E-mail: chen-yq06@mails.tsinghua.edu.cn, zhangxn06@mails.tsinghua.edu.cn

b Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

c State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, P.R. China
E-mail: zhaoqing@pku.edu.cn

d State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, P.R. China

Abstract

We report for the first time the fabrication of p-type SiC nanowire field-effect transistors (FETs) using an individual Al-doped 3C-SiC nanowire with a single crystalline structure. The Raman spectroscopy of the as-grown p-type wire indicates that the linewidth and peak intensity of LO-phonon bands are sensitive to temperature variations.

Graphical abstract: P-type 3C-SiC nanowires and their optical and electrical transport properties

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Article information

DOI
https://doi.org/10.1039/C1CC10863H
Article type
Communication
Submitted
14 Feb 2011
Accepted
19 Apr 2011
First published
09 May 2011

Chem. Commun., 2011,47, 6398-6400

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P-type 3C-SiC nanowires and their optical and electrical transport properties

Y. Chen, X. Zhang, Q. Zhao, L. He, C. Huang and Z. Xie, Chem. Commun., 2011, 47, 6398 DOI: 10.1039/C1CC10863H

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