Issue 42, 2010

Multi-temperature synchrotronPXRD and physical properties study of half-Heusler TiCoSb

Abstract

Phase pure samples of the half-Heusler material TiCoSb were synthesised and investigated. Multi-temperature synchrotron powder X-ray diffraction (PXRD) data measured between 90 and 1000 K in atmospheric air confirm the phase purity, but they also reveal a decomposition reaction starting at around 750 K. This affects the high temperature properties since TiCoSb is semiconducting, whereas CoSb is metallic. Between 90 K and 300 K the linear thermal expansion coefficient is estimated to be 10.5 × 10−6 K−1, while it is 8.49 10−6 K−1 between 550 K and 1000 K. A fit of a Debye model to the Atomic Displacement Parameters obtained from Rietveld refinement of the PXRD data gives a Debye temperature of 395(4) K. The heat capacity was measured between 2 K and 300 K and a Debye temperature of 375(5) K was obtained from modelling of the data. Coming from low temperatures the electrical resistivity shows a metallic to semiconducting transition at 113 K. A relatively high Seebeck coefficient of ∼−250 μV K−1 was found at 400 K, but the substantial thermal conductivity (∼10 W mK−1 at 400 K) leads to a moderate thermoelectric figure of merit of 0.025 at 400 K.

Graphical abstract: Multi-temperature synchrotron PXRD and physical properties study of half-Heusler TiCoSb

Supplementary files

Article information

Article type
Paper
Submitted
29 Jun 2010
Accepted
07 Sep 2010
First published
04 Oct 2010

Dalton Trans., 2010,39, 10154-10159

Multi-temperature synchrotron PXRD and physical properties study of half-Heusler TiCoSb

I. Skovsen, L. Bjerg, M. Christensen, E. Nishibori, B. Balke, C. Felser and B. B. Iversen, Dalton Trans., 2010, 39, 10154 DOI: 10.1039/C0DT00742K

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