Issue 39, 2010

Kinetic correlations for H2 addition and elimination reaction mechanisms during silicon hydridepyrolysis

Abstract

The mechanism of H2 addition and elimination reactions in selected silicon hydrides (SixHy, x = 1–10, y = 4–20) was modeled using quantum chemical calculations, statistical thermodynamics, transition state theory and transition state group additivity. Rate coefficients for 25 H2 addition reactions were calculated using G3//B3LYP. For nearly every reaction, the overall conversion exhibits two steps. In the addition direction, the reactants first meet to form an adduct which then converts into a saturated silicon hydride via homolytic H–H bond cleavage. Values for the single-event Arrhenius pre-exponential factor, Ã, and the activation energy, Ea, were calculated from the G3//B3LYP rate coefficients, and a group additivity scheme was developed to predict à and Ea. The values predicted by group additivity are more accurate than kinetic correlations currently used in the literature, which rely on representative à values and the Evans-Polanyi correlation. The factors that have the most pronounced effect on à and Ea were investigated, and stabilization of the divalent silicon atom of the unsaturated silicon hydride with electron-donating substituents was found to influence kinetic parameters considerably. The rate coefficients for H2 addition reactions were found to correlate reasonably well with the difference in energy between the highest occupied molecular orbital of H2 (EHOMO) and the lowest unoccupied molecular orbital of the reactant silylene (ELUMO).

Graphical abstract: Kinetic correlations for H2 addition and elimination reaction mechanisms during silicon hydride pyrolysis

Supplementary files

Article information

Article type
Paper
Submitted
24 May 2010
Accepted
28 Jul 2010
First published
23 Aug 2010

Phys. Chem. Chem. Phys., 2010,12, 12676-12696

Kinetic correlations for H2 addition and elimination reaction mechanisms during silicon hydride pyrolysis

A. J. Adamczyk, M. Reyniers, G. B. Marin and L. J. Broadbelt, Phys. Chem. Chem. Phys., 2010, 12, 12676 DOI: 10.1039/C0CP00666A

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