InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Abstract
A study of
* Corresponding authors
a
Department of Micro and Nanosciences,Micronova, AaltoUniversity, Espoo, Finland
E-mail:
pekka.torma@tkk.fi
Fax: +358 9 470 25008
Tel: +358 9 470 23121
b OptoGaN GmbH, Konrad Adenauer Allee 11, Dortmund, Germany
c OptoGaN Oy, Tietotie 3, Espoo, Finland
A study of
P. T. Törmä, M. Ali, O. Svensk, S. Suihkonen, M. Sopanen, H. Lipsanen, M. Mulot, M. A. Odnoblyudov and V. E. Bougrov, CrystEngComm, 2010, 12, 3152 DOI: 10.1039/C001607A
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