Issue 19, 2010
From the journal:

Chemical Communications

Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps†

Takahiro Kono,a   Daisuke Kumaki,b   Jun-ichi Nishida,a   Shizuo Tokitoab  and  Yoshiro Yamashita*a  

* Corresponding authors

a Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
E-mail: yoshiro@echem.titech.ac.jp
Fax: (+81)45-924-5489
Tel: (+81)45-924-5571

b NHK Science and Technical Research Laboratory, Kinuta, Setagaya-ku, Tokyo 157-851, Japan

Abstract

Novel OFET materials showing high mobility (0.77 cm2 V−1 s−1) and good air-stability were developed using a benzobis(thiadiazole) (BBT) unit and the high FET performance was attributed to the low LUMO level and the film morphology.

Graphical abstract: Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps

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Article information

DOI
https://doi.org/10.1039/B925151K
Article type
Communication
Submitted
01 Dec 2009
Accepted
18 Mar 2010
First published
13 Apr 2010

Chem. Commun., 2010,46, 3265-3267

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Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps

T. Kono, D. Kumaki, J. Nishida, S. Tokito and Y. Yamashita, Chem. Commun., 2010, 46, 3265 DOI: 10.1039/B925151K

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