Issue 11, 2009
From the journal:

Physical Chemistry Chemical Physics

Surface states- and field-effects at p- and n-doped GaAs(111)A/solution interface

Rareş Scurtu,*a   Niculae I. Ionescu,a   Mihail Lăzărescub  and  Valentina Lăzărescua  

* Corresponding authors

a Institute of Physical Chemistry, Spl. Independentei nr. 202, Bucharest, Romania
E-mail: rscurtu@icf.ro
Fax: +40 (0)21 3121147
Tel: +40 (0)21 3167912

b National Institute of Material Physics, P.O. Box MG 7, Bucharest, Romania

Abstract

We have investigated the behaviour of n- and p-doped GaAs(111)A electrodes in sulfuric acid solution by electrochemical impedance spectroscopy (EIS) and second harmonic generation (SHG) measurements. The potential dependence of the SHG response was found to be closely related to the changes in the surface state population, as revealed by analysis of the impedance data. The nature of the majority of carriers turned out to be a key factor in shaping the surface state- and field-effect on the second harmonic generation process.

Graphical abstract: Surface states- and field-effects at p- and n-doped GaAs(111)A/solution interface

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Article information

DOI
https://doi.org/10.1039/B817045B
Article type
Paper
Submitted
29 Sep 2008
Accepted
18 Dec 2008
First published
29 Jan 2009

Phys. Chem. Chem. Phys., 2009,11, 1765-1770

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Surface states- and field-effects at p- and n-doped GaAs(111)A/solution interface

R. Scurtu, N. I. Ionescu, M. Lăzărescu and V. Lăzărescu, Phys. Chem. Chem. Phys., 2009, 11, 1765 DOI: 10.1039/B817045B

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