Abstract

Preparation of SnN_x films has been studied by atmospheric pressure chemical vapor deposition using SnCl₂ and NH₃ as starting materials. The films were deposited onto a quartz substrate at 550–675 °C with growth rates of 0.1–2.5 µm h⁻¹. They showed a typical X-ray diffraction pattern for SnN_x with a hexagonal structure. The band-gap was estimated to be 2.05 eV from the transmission spectra. The electron probe X-ray microanalysis showed that the N/Sn ratio of the as-deposited films was 0.73–1.10, which was dependent upon the growth temperature. They were conductive with resistivities of 0.3–10 Ω cm. The electrochromism was observed when ±1.0 V (SCE) potentials were applied to the SnN_x films in a 1.0 M Na₂SO₄ electrolyte solution.