Influence of oxygen pressure on the structure of reactively deposited indium oxide films

Abstract

Indium oxide films have been reactively deposited at oxygen pressures of 3 × 10^–3–0.3 Pa and at substrate temperatures of 25–200 °C. The influence of the oxygen pressure on the structure of the films was studied using transmission electron microscopy and electron diffraction. Below an oxygen pressure of 2 × 10^–2 Pa, films were deposited in an In phase at room temperature, and in a In–In₂O₃ phase mixture at 100 °C and above. Above 2 × 10^–2 Pa, films were amorphous or quasi-amorphous below 150 °C, while they were crystalline In₂O₃ at 150 and 200 °C. The lattice parameters of the In and In₂O₃ phases in the films were also determined by X-ray diffraction.