Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents
Abstract
Hydrogen peroxide is an effective chemical polish for gallium arsenide in the pH range 6–8.5. The polished gallium arsenide surface has a surface roughness of < 1 nm and is superior to that obtained from polishing with dibromine–methanol solutions.