Issue 3, 1992

Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents

Abstract

Hydrogen peroxide is an effective chemical polish for gallium arsenide in the pH range 6–8.5. The polished gallium arsenide surface has a surface roughness of < 1 nm and is superior to that obtained from polishing with dibromine–methanol solutions.

Article information

Article type
Paper

J. Mater. Chem., 1992,2, 367-368

Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents

S. G. McMeekin, M. Robertson, L. McGhee and J. M. Winfield, J. Mater. Chem., 1992, 2, 367 DOI: 10.1039/JM9920200367

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