Characterization and photoelectrochemical studies of CuInS2 thin films prepared by sulphurization of CuIn alloy

Abstract

Thin films of CulnS₂, prepared by sulphurization of electroless deposited Culn alloy at different conversion temperatures and time durations, have been characterized by XRD and AES. The films converted at 250 and 350 °C are of mixed phase while those converted in the range 450–550 °C are of single-phase sphalerite with (112) as the preferred orientation. Detailed photoelectrochemical investigations show the best films are those obtained at a conversion temperature at 450 °C.