Issue 19, 2021

Highly sensitive, broad-band organic photomultiplication-type photodetectors covering UV-Vis-NIR

Abstract

UV-Vis-NIR broad-band organic photomultiplication-type photodetectors (OPMPDs) were fabricated with a device structure of indium tin oxide (ITO)/zinc oxide (ZnO)/(∼150 nm) active layers/Au. The active layers consisted of a 2,2′-((2Z,2′Z)-((12,13-bis(2-ethylhexyl)-3-undecyl-9-(undecyloxy)-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2′′,3′′:4′,5′]thieno[2′,3′:4,5]pyrrolo[3,2-g]thieno[3,2-b]indole-2,10-diyl)bis(methaneylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H,1-diylidene))dimalononitrile (Y6-1O):5-(5-(4,8-bis(4-chloro-5-(2-ethylhexyl)thiophen-2-yl)-6-methylbenzo[1,2-b:4,5-b′]dithiophen-2-yl)-4-(2-butyloctyl)-2-yl)-8-(4-(2-butyloctyl)-5-thiophen-2-yl)dithieno[3′,2′:3,4;2′′,3′′:5,6]benzo[1,2-c][1,2,5]thiadiazole (D18-Cl) (1.6 : 1, wt/wt) layer determining the spectral response range and one photomultiplication (PM) layer [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM):poly(3-hexylthiophene-2,5-diyl) (P3HT) (100 : 5, wt/wt). The spectral response of the double-layered OPMPDs was determined by the trapped-hole distribution in PC71BM:P3HT near by Au electrode, which mainly originated from the photogenerated hole in the Y6-1O:D18-Cl layer. The trapped-hole in P3HT induced interfacial band-bending for efficient electron-tunneling injection from the Au electrode. The trapped-hole-induced electron-tunneling injection could be markedly enhanced by increasing the applied voltage, leading to markedly improved external quantum efficiency (EQE) values. The double-layered OPMPDs exhibited a broad spectral response range from 300 to 1000 nm, and achieved a highly effective EQE of approximately 50 400% at 360 nm under an applied voltage of 5 V, which was the highest value among organic photodetectors (OPDs) under the same applied voltage. Moreover, the maximum specific detectivity (D*) of 3 × 1012 jones and a linear dynamic range (LDR) of 120 dB at 810 nm under an applied voltage of 5 V were achieved in the double-layered OPMPDs. This study brings forward a smart strategy to achieve high performance broad-band OPMPDs by employing double-layered thin active layers.

Graphical abstract: Highly sensitive, broad-band organic photomultiplication-type photodetectors covering UV-Vis-NIR

Supplementary files

Article information

Article type
Paper
Submitted
04 Feb 2021
Accepted
22 Apr 2021
First published
22 Apr 2021

J. Mater. Chem. C, 2021,9, 6357-6364

Highly sensitive, broad-band organic photomultiplication-type photodetectors covering UV-Vis-NIR

M. Liu, J. Wang, K. Yang, Z. Zhao, Z. Zhou, Y. Ma, L. Shen, X. Ma and F. Zhang, J. Mater. Chem. C, 2021, 9, 6357 DOI: 10.1039/D1TC00555C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements